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BSM 75 GB 120 DN2
IGBT Power Module
* Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate
Type BSM 75 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
IC
Package HALF-BRIDGE 1
Ordering Code C67076-A2106-A70
1200V 105A
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 k
Gate-emitter voltage DC collector current
20 A 105 75
TC = 25 C TC = 80 C
Pulsed collector current, tp = 1 ms
ICpuls
210 150
TC = 25 C TC = 80 C
Power dissipation per IGBT
Ptot
625
W + 150 -55 ... + 150 0.2 0.5 2500 20 11 F 55 / 150 / 56 Vac mm K/W C
TC = 25 C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD Vis
-
Semiconductor Group
1
Mar-29-1996
BSM 75 GB 120 DN2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 1 4.5 6.5 3 3.7
V
VGE = VCE, IC = 3 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 75 A, Tj = 25 C VGE = 15 V, IC = 75 A, Tj = 125 C
Zero gate voltage collector current
ICES
1.5 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1200 V, VGE = 0 V, Tj = 125 C
Gate-emitter leakage current
IGES
320
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
31 5.5 0.8 0.3 -
S nF -
VCE = 20 V, IC = 75 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Mar-29-1996
BSM 75 GB 120 DN2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit
td(on)
30 60
ns
VCC = 600 V, VGE = 15 V, IC = 75 A RGon = 15
Rise time
tr
70 140
VCC = 600 V, VGE = 15 V, IC = 75 A RGon = 15
Turn-off delay time
td(off)
450 600
VCC = 600 V, VGE = -15 V, IC = 75 A RGoff = 15
Fall time
tf
70 100
VCC = 600 V, VGE = -15 V, IC = 75 A RGoff = 15
Free-Wheel Diode Diode forward voltage
VF
2.3 1.8 2.8 -
V
IF = 75 A, VGE = 0 V, Tj = 25 C IF = 75 A, VGE = 0 V, Tj = 125 C
Reverse recovery time
trr
0.125 -
s
IF = 75 A, VR = -600 V, VGE = 0 V diF/dt = -900 A/s, Tj = 125 C
Reverse recovery charge
Qrr
C
IF = 75 A, VR = -600 V, VGE = 0 V diF/dt = -900 A/s Tj = 25 C Tj = 125 C
3.2 12 -
Semiconductor Group
3
Mar-29-1996
BSM 75 GB 120 DN2
Power dissipation Ptot = (TC) parameter: Tj 150 C
650 W 550
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 3
A
tp = 19.0s
Ptot
500 450 400 350 300 250
IC
10 2
100 s
10 1
1 ms
10 ms
200 10 0 150 100 50 0 0 20 40 60 80 100 120 C 160 10 -1 0 10 10
1
DC
10
2
10
3
V
TC
VCE
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
120 A 100
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
IGBT
K/W
IC
90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 160
ZthJC
10 -1
10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01
10 -4 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
TC
tp
Semiconductor Group
4
Mar-29-1996
BSM 75 GB 120 DN2
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 s, Tj = 25 C
150 A 17V 15V 13V 11V 9V 7V
IC = f (VCE)
parameter: tp = 80 s, Tj = 125 C
150 A 17V 15V 13V 11V 9V 7V
IC
120 110 100 90 80 70 60 50 40 30 20 10 0 0
IC
120 110 100 90 80 70 60 50 40 30 20 10 0 0
1
2
3
V
5
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
150 A
IC
120 110 100 90 80 70 60 50 40 30 20 10 0 0
2
4
6
8
10
V 14 VGE
Semiconductor Group
5
Mar-29-1996
BSM 75 GB 120 DN2
Typ. gate charge VGE = (QGate) parameter: IC puls = 75 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0, f = 1 MHz
10 2
nF
VGE
16 14 12
C
600 V
800 V
10 1 Ciss
10 8 10 0 6 4 2 0 0 10 -1 0 Coss Crss
100
200
300
400
nC
550
5
10
15
20
25
30
QGate
V 40 VCE
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V
2.5
ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH
12
ICpuls/IC
ICsc/IC
8 1.5 6 1.0 4
0.5 2
0.0 0 200 400 600 800 1000 1200 V 1600 VCE
0 0 200 400 600 800 1000 1200 V 1600 VCE
Semiconductor Group
6
Mar-29-1996
BSM 75 GB 120 DN2
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15V, RG = 15
10 4
t = f (RG) , inductive load , Tj = 125C
par.: VCE = 600V, IC = 75 A
10 4
ns t 10 3 t
ns
10 3
tdoff
tdoff tr tdon 10 2 tr tf tdon 10 2 tf
10 1 0
20
40
60
80
100 120 140
A
180
10 1 0
10
20
30
40
50
60
IC
80
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 15
40 Eon
E = f (RG) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, IC = 75 A
30
mWs E 30
mWs E
Eon
20 25
20 Eoff
15 Eoff 10
15
10 5 5 0 0 0 0
20
40
60
80
100 120 140
A
180
10
20
30
40
50
60
IC
80
RG
Semiconductor Group
7
Mar-29-1996
BSM 75 GB 120 DN2
Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj
150 A
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
Diode
K/W
IF
120 110 100 90 80 70 60 50 40 30 20 10 0 0.0
ZthJC
10 -1
Tj=125C
Tj=25C
10 -2 D = 0.50 0.20 0.10 10 -3 0.05 single pulse 0.02 0.01
0.5
1.0
1.5
2.0
V
3.0
10 -4 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
VF
tp
Semiconductor Group
8
Mar-29-1996
BSM 75 GB 120 DN2
Circuit Diagram
Package Outlines Dimensions in mm Weight: 250 g
Semiconductor Group
9
Mar-29-1996

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